4
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18260HR6 MRF8S18260HSR6
Figure 2. MRF8S18260HR6(HSR6) Test Circuit Component Layout
C11
C9
C7
R4
R2
R3
R1
C2
C1
R6
C3
C5
C4
C6
C10
C8
C12
R5
R7
C25
C24
C21
C23
C19
C14
C15
C13
C20
C22
C17
C18
C16
MRF8S18260H/HS
Rev. 2
CUT OUT AREA
C26
C27
Table 5. MRF8S18260HR6(HSR6) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
2.2 pF Chip Capacitor
ATC600F2R2BT250XT
ATC
C2, C7, C8, C14, C20, C21
15 pF Chip Capacitors
ATC600F150JT250XT
ATC
C3, C4, C5, C6 C16, C17,
C18, C19
1.0 pF Chip Capacitors
ATC600F1R0BT250XT
ATC
C9, C10, C22, C23
10
μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C11, C12
47
μF, 35 V Electrolytic Capacitors
476KXM050M
Illinois Capacitor
C13
0.6 pF Chip Capacitor
ATC600F0R6BT250XT
ATC
C15
0.4 pF Chip Capacitor
ATC600F0R4BT250XT
ATC
C24, C25
470
μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C26, C27
6.8
μF Chip Capacitors
C4532X7RIH685K
TDK
R1
2k?, 1/4 W Chip Resistor
CRCW12062k00FKEA
Vishay
R2, R3
4.75
?, 1/4 W Chip Resistors
CRCW12064R75FKEA
Vishay
R4, R5, R6, R7
1k?, 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
PCB
0.020″,
εr
=3.5
RO4350B
Rogers
相关PDF资料
MRF8S19140HSR3 FET RF N-CH 1960MHZ 28V NI780HS
MRF8S19260HSR6 FET RF N-CH 1.9GHZ 30V NI1230S-8
MRF8S21120HSR3 FET RF N-CH 2.1GHZ 28V NI780HS
MRF8S21140HSR3 FET RF N-CH 2GHZ 28V NI780S
MRF8S21200HSR6 MOSFET RF N-CH 48W NI-1230HS
MRF8S23120HSR5 MOSFET RF N-CH 120W NI-780S
MRF8S26120HSR3 FET RF N-CH 2.6GHZ 28V NI780S
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相关代理商/技术参数
MRF8S19140HR3 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S19140HR5 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S19140HS 制造商:Freescale Semiconductor 功能描述:
MRF8S19140HSR3 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 140W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S19140HSR5 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 140W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S19260H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF8S19260HR5 功能描述:射频MOSFET电源晶体管 HV8 1.9GHZ 260W NI1230-8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S19260HR6 功能描述:射频MOSFET电源晶体管 65V N-CH 1960MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray